savantic semiconductor product specification silicon npn power transistors 2SD2093 d escription with to-3pml package darlington complement to type 2sb1388 high dc current gain low saturation voltage large current capacity and large aso applications motor drivers printer hammer drivers relay drivers, voltage regulator control pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 110 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 6 v i c collector current 10 a i cm collector current-peak 15 a t c =25 45 p c collector power dissipation 3.0 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pml) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD2093 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =5a;i b =10m a 0.9 1.5 v v besat base-emitter saturation voltage i c =5a;i b =10m a 2.0 v v (br)ceo collector-emitter breakdown voltage i c =5ma;i b =0 110 v v (br)cbo collector-base breakdown voltage i c =50ma;r be = > 100 v i ebo emitter cut-off current v eb =5v; i c =0 3.0 ma i cbo collector cut-off current v cb =80v; i e =0 0.1 ma h fe dc current gain i c =5 a ; v ce =3v 1500 4000 f t transition frequency i c =5 a ; v ce =5v 20 mhz switching times t on turn-on time 0.6 s t s storage time 4.8 s t f fall time i c =5a i b1 =-i b2 =10ma v cc =50v ,r l =10 d 1.6 s
savantic semiconductor product specification 3 silicon npn power transistors 2SD2093 package outline fig.2 outline dimensions
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